首页> 外文期刊>ACS applied materials & interfaces >Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction
【24h】

Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction

机译:通过单步水热反应直接生长具有肖特基接触的横向ZnO纳米棒紫外光电探测器

获取原文
获取原文并翻译 | 示例
       

摘要

Lateral zinc oxide (ZnO) nanorod metal-semiconductor-metal ultraviolet detectors with different metal contact were fabricated on glass substrate by a single-step hydrothermal reaction. With the combined effect from a ZnO seed layer and an inactive layer for nanorod growth, ZnO nanorods could grow laterally and aligned between the interdigitated electrodes. When the growth process is terminated, the integration of ZnO nanorods into a function device can be achieved in the meantime. The structure can be modeled as being composed of two same Schottky barriers connected back to back, in series with a resistance of R. The devices are visible-blind and have great response even in mid ultraviolet region. The photodetectors with Ni electrode show better performance both in the aspect of photocurrent and response time, owing to the larger Schottky barrier at the Ni/ZnO interface. By surface coating with polymethyl methacrylate, the response has been further improved; Our approach provides a simple and effective way to fabricate high performance ultraviolet detectors.
机译:通过一步水热反应在玻璃基板上制备了具有不同金属接触的横向氧化锌(ZnO)纳米棒金属-半导体-金属紫外探测器。利用ZnO种子层和非活性层的纳米棒生长的综合作用,ZnO纳米棒可以横向生长并在叉指电极之间对齐。当生长过程终止时,可以同时将ZnO纳米棒集成到功能器件中。可以将该结构建模为由两个相同的背对背连接的肖特基势垒组成,串联的电阻为R。该器件是可见盲的,即使在中紫外区域也具有出色的响应。由于Ni / ZnO界面处的肖特基势垒较大,带有Ni电极的光电探测器在光电流和响应时间方面均表现出更好的性能。通过在表面涂上聚甲基丙烯酸甲酯,反应得到了进一步改善。我们的方法为制造高性能紫外线探测器提供了一种简单有效的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号