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Surface Ferromagnetic p-Type ZnO Nanowires through Charge Transfer Doping

机译:通过电荷转移掺杂的表面铁磁p型ZnO纳米线

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摘要

We report first-principles theoretical investigation of p-type charge transfer doping of zinc oxide (ZnO) nanowires by molecular adsorption. We find that spontaneous dissociative adsorption of fluorine molecules introduces half-emptying of otherwise fully filled oxygen-derived surface states. The resulting surface Fermi level is so close to the valence band maximum of the ZnO nanowire that the nanowire undergoes significant p-type charge transfer doping. Those half-filled surface states are fully spin-polarized and lead to surface ferromagnetism that is stable at room temperature. We also analyze the kinetic control regime of the surface transfer doping and find that it may result in nonequilibrium steady states. The present results suggest that postgrowth engineering of surface states has high potential in manipulating ZnO nanostructiires useful for both electronics and spintronics.
机译:我们报告通过分子吸附对氧化锌(ZnO)纳米线进行p型电荷转移掺杂的第一原理理论研究。我们发现,氟分子的自发解离吸附引入了其他完全充满的氧衍生表面态的半空。所得的表面费米能级非常接近ZnO纳米线的价带最大值,以至于纳米线经历了明显的p型电荷转移掺杂。这些半填充的表面状态被完全自旋极化,并导致在室温下稳定的表面铁磁性。我们还分析了表面转移掺杂的动力学控制机制,发现它可能导致非平衡稳态。目前的结果表明,表面态的后生长工程在操纵可用于电子和自旋电子学的ZnO纳米结构方面具有很高的潜力。

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