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In situ Electrochemical Monitoring of Selective Etching in Ordered Mesoporous Block-Copolymer Templates

机译:有序介孔嵌段共聚物模板中选择性蚀刻的原位电化学监测

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摘要

We present a simple in situ electrochemical probe for the selective etching of the PLA component of thin film poly(4-fluorostyrene)-b-poly(D,L-lactide) (PFS-b-PLA) mesoporous block copolymer templates with a range of highly ordered microphase morphologies. Etching rates between 0.6 and 0.9 nm s~(-1) were measured in electric-field aligned standing PLA cylinders 12 nm wide and up to 800 nm long. The etching rate within a bicontinuous gyroid network morphology is comparable to that of the hexagonally ordered cylindrical array. A microphase-separated, nonaligned but film-spanning PLA pore structure is found in cylinder forming PFS-b-PLA films immediately after spin coating that could have applications in patterning of functional nanostructured arrays. Cross-film percolation of the PLA phase is confirmed electro chemically, with an etching rate approximately half that of the highly ordered morphologies. The etching rate is independent of template thickness in all three morphologies.
机译:我们提出了一种简单的原位电化学探针,用于选择性蚀刻薄膜聚(4-氟苯乙烯)-b-聚(D,L-丙交酯)(PFS-b-PLA)介孔嵌段共聚物模板的PLA成分高度有序的微相形态。在电场对准的立式12毫米宽,最长800纳米长的PLA圆柱中,测得的蚀刻速率介于0.6和0.9 nm s〜(-1)之间。双连续螺旋形网络形态中的蚀刻速率与六角形有序圆柱阵列的蚀刻速率相当。在旋涂后立即在圆柱形成的PFS-b-PLA膜中发现了微相分离的,未排列但跨膜的PLA孔结构,该膜可用于功能性纳米结构阵列的图案化。电化学证实了PLA相的跨膜渗透,其刻蚀速率约为高度有序形态的一半。在所有三种形态中,蚀刻速率均与模板厚度无关。

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