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In-situ surface-sensitive X-ray diffraction study on the influence of iodide over the selective electrochemical etching of Cu_3Au (111)

机译:碘化物对Cu_3Au(111)选择性电化学刻蚀的影响的原位表面敏感X射线衍射研究

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摘要

During selective etching (dealloying) surface-sensitive X-ray diffraction employing Synchrotron light has been used to in-situ monitor the potential-controlled formation of Au-rich films on the surface of Gu_3Au (111) in iodide-containing electrolytes. Similar to the case in pure sulfuric acid we observed a sequence of structural transformations starting from a well-prepared pristine surface to a porous film consisting of substrate-oriented Au ligaments. Also stacking-reversed ultrathin Au-rich films and Au islands form as intermediate steps but no passive-like behavior was observed in iodide-containing electrolytes, i.e. the surface quickly developed Au ligaments after reaching the Cu dissolution potential. At low overpotentials comparatively coarse Au islands point to a higher mobility of Au/electrolyte interfaces in iodide-containing solutions. At higher overpotentials and also with higher iodide concentrations an epitaxial Cu-iodide precipitate film showed an orientation relation of CuI(111)||CuAu(111)and two azimuthal domains of<-2,2,0>||<-2,2,0>and<-2,2,0>||<2, -2,0>. This partially dissolution-inhibiting bulk CuI layer is observed to produce a bimodal pore size instead of usually obtained homogeneous porosity. The X-ray data and supporting ex-situ AFM and SEM images show marked differences in the morphology and connectivity of the forming nanoporous Au layer. Precipitation layers are thus suggested to provide means for controlling the nanoporosity for applications of dealloyed films and surfaces.
机译:在选择性蚀刻(脱合金)过程中,使用Synchrotron光的表面敏感X射线衍射已用于原位监测含碘化物电解质中Gu_3Au(111)表面上富Au膜的电势受控形成。与纯硫酸中的情况相似,我们观察到了一系列结构上的转变,这些过程从准备充分的原始表面到由面向基材的金韧带组成的多孔膜开始。反向堆叠的超薄富金膜和金岛也作为中间步骤形成,但在含碘化物的电解质中未观察到类似被动的行为,即表面达到铜溶解电位后迅速形成金韧带。在低电势下,相对较粗糙的Au岛表明含碘化物溶液中Au /电解质界面的迁移率更高。在较高的超电势下以及在较高的碘化物浓度下,外延Cu-碘化物沉淀膜显示出CuI(111)|| CuAu(111)与<-2,2,0> || <-2的两个方位域的取向关系, 2,0>和<-2,2,0> || <2,-2,0>。观察到该部分抑制溶解的块状CuI层产生双峰孔径,而不是通常获得的均匀孔隙率。 X射线数据和支持的异位AFM和SEM图像显示,形成的纳米多孔金层的形态和连通性存在明显差异。因此建议沉淀层为脱合金膜和表面的应用提供控制纳米孔隙度的手段。

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