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Composition-Driven Phase Boundary and Piezoelectricity in Potassium-Sodium Niobate-Based Ceramics

机译:铌酸钾钠基陶瓷的成分驱动相界和压电

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The piezoelectricity of (K,Na)NbO3 ceramics strongly depends on the phase boundary types as well as the doped compositions. Here, we systematically studied the relationships between the compositions and phase boundary types in (K,Na) (Nb,Sb)O-3-Bi(0.5)Na(0.5)AO(3) (KNNS-BNA, A = Hf, Zr, Ti, Sn) ceramics; then their piezoelectricity can be readily modified. Their phase boundary types are determined by the doped elements. A rhombohedral-tetragonal (R-T) phase boundary can be driven in the compositions range of 0.035 <= BNH <= 0.040 and 0.035 <= BNZ <= 0.045; an orthorhombic-tetragonal (O-T) phase boundary is formed in the composition range of 0.005 <= BNT <= 0.02; and a pure O phase can be only observed regardless of BNS content (<= 0.01). In addition, the phase boundary types strongly affect their corresponding piezoelectricities. A larger d(33) (similar to 440-450 pC/N) and a higher d(33)* (similar to 742-834 pm/V) can be attained in KNNS-BNA (A = Zr and HO ceramics due to the involvement of R-T phase boundary, and unfortunately KNNS-BNA (A = Sn and Ti) ceramics possess a relatively poor piezoelectricity (d(33) <= 200 and d(33)* < 600 pm/V) due to the involvement of other phase structures (O-T or O). In addition, the underlying physical mechanisms for the relationships between piezoelectricity and phase boundary types were also discussed. We believe that comprehensive research can design more excellent ceramic systems concerning potassium-sodium niobate.
机译:(K,Na)NbO3陶瓷的压电性很大程度上取决于相界类型以及掺杂成分。在这里,我们系统地研究了(K,Na)(Nb,Sb)O-3-Bi(0.5)Na(0.5)AO(3)(KNNS-BNA,A = Hf, Zr,Ti,Sn)陶瓷;然后可以很容易地改变它们的压电性。它们的相界类型由掺杂元素决定。可以在0.035 <= BNH <= 0.040和0.035 <= BNZ <= 0.045的组成范围内驱动菱形-四边形(R-T)相界。在0.005≤BNT≤0.02的范围内形成正交斜四边形(O-T)相界。而且无论BNS含量如何(<= 0.01),都只能观察到纯O相。另外,相边界类型强烈影响其相应的压电性。在KNNS-BNA中,可以达到较大的d(33)(类似于440-450 pC / N)和较高的d(33)*(类似于742-834 pm / V)(A = Zr和HO陶瓷,原因是由于RT相界的参与,不幸的是,由于KNNS-BNA(A = Sn和Ti)陶瓷的介入,其压电性相对较差(d(33)<= 200和d(33)* <600 pm / V)。其他相结构(OT或O),此外,还讨论了压电与相边界类型之间关系的潜在物理机理,我们相信全面的研究可以设计出关于铌酸钾钠的更优异的陶瓷体系。

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