首页> 外文期刊>ACS applied materials & interfaces >Mg_(0.58)Zn_(0.42)O Thin Films on MgO Substrates with MgO Buffer Layer
【24h】

Mg_(0.58)Zn_(0.42)O Thin Films on MgO Substrates with MgO Buffer Layer

机译:具有MgO缓冲层的MgO衬底上的Mg_(0.58)Zn_(0.42)O薄膜

获取原文
获取原文并翻译 | 示例
       

摘要

Cubic Mg_(0.58)Zn_(0.42)O thin films with (100) orientation were grown on cubic MgO substrates. The band gap of the alloy films corresponds to solar blind band. In the case that a MgO buffer layer was employed, the surface roughness was decreased from 38 to 1.6 nm under the same growth conditions. A metal-semiconductor-metal phocodetector based on this MgZnO film was fabricated, which showed a low dark current of 0.16 pA and lower sub-bandgap photoresponse than the ones with rougher surface in our early reports.
机译:在立方MgO衬底上生长(100)取向的立方Mg_(0.58)Zn_(0.42)O薄膜。合金膜的带隙对应于太阳盲带。在使用MgO缓冲层的情况下,在相同的生长条件下,表面粗糙度从38nm降低至1.6nm。制作了基于该MgZnO膜的金属-半导体-金属光电探测器,与我们较早的报道相比,该探测器的暗电流低至0.16 pA,子带隙光响应低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号