GaN Schottky diode characterization and recovering with etching damage by RIE

摘要

Dry etching technique is generally used for the etching of group III-Nitride semiconductors. We have used RIE, which is one of the dry etching technology, on n-GaN and studied its influence. PL spectrum is used to study creation of damage. Upon etching, the band-edge intensity is decrease and band-edge-to-yellow intensity ratio is increase. The XPS peaks reveal presence of the discharge-gas-related residues in the surface of the film. Schottky diodes on RIE etched samples showed poor diode characteristics due to RIF damage. The annealing after N{sub}2 plasma cleaning is found to be useful for recovering RIE damage.