Effect of Nb Doping on Crystalline Orientation, Electric and Fatigue Properties of PZT Thin Films Prepared by Sol-Gel Process

摘要

Pb(NbxZr0.52Ti0.48)O-3 (PNZT) (x = 0 %, 1%, 2 %, 3%, 4 %, 5%) thin films were prepared in a sol-gel process to investigate the effects of Nb doping on the crystalline orientation, electric and fatigue properties of lead zirconate titanate (PZT) films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that PNZT films withNbdoping concentration below 5% exhibited a dense perovskite structure with (100) preferred orientation. The maximum dielectric constant was obtained in 4% Nb-doped PZT film with a precision impedance analyzer. Remnant polarization and fatigue resistance were enhanced significantly with 2% Nb dopant.