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首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >Mechanical, dielectric properties and thermal shock resistance of porous Si2N2O/Si3N4 composite ceramics
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Mechanical, dielectric properties and thermal shock resistance of porous Si2N2O/Si3N4 composite ceramics

机译:多孔Si2N2O / Si3N4复合陶瓷的机械,介电性能和热抗震性

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摘要

Porous Si2N2O/Si3N4 composite ceramics were fabricated by gas pressure sintering of Si3N4 and SiO2 with Sm2O3 as sintering additive under N-2 atmosphere. Porosity and beta-Si3N4 phase of the composites are increased with the increasing alpha-Si3N4 content in starting materials. The composite ceramics show high flexural strength (223 similar to 288 MPa at room temperature) and good thermal shock resistance and the critical thermal shock temperature (Delta T-c) could be up to 1100 degrees C. The dielectric properties are mainly influenced by the sample porosity and phase composition. The as-prepared Si2N2O/Si3N4 composite ceramics possess both low dielectric constant (epsilon = 4.8-5.2) and loss tangent (tan delta = 0.0014-0.0063), combined with excellent mechanical performance and thermal shock resistance, showing Si2N2O/Si3N4 composite ceramics could be promising high-temperature wave transparent materials.
机译:通过Si3N4和SiO 2的气体压力烧结制造多孔Si2N2O / Si3N4复合陶瓷,用SM2O3作为烧结添加剂在N-2气氛下。 复合材料的孔隙率和β-Si3N4相随着原料中的α-Si3N4含量的增加而增加。 复合陶瓷显示出高弯曲强度(223,在室温下与288MPa相似),良好的耐热冲击性和临界热冲击温度(Delta Tc)可达1100℃。电介质特性主要受样品孔隙率的影响 和相组成。 制备的Si2N2O / Si3N4复合陶瓷具有低介电常数(EPSILON = 4.8-5.2)和损耗切线(TAN DELTA = 0.0014-0.0063),结合出色的机械性能和热抗震性,显示SI2N2O / SI3N4复合陶瓷可以 承诺高温波透明材料。

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