On the Dynamic Annealing of Ion-Induced Radiation Damage in Diamond under Irradiation at Elevated Temperatures

摘要

The structure and properties of the near surface layer of diamond after high-fluence irradiation at elevated temperatures with 30-keV Ar_(+), Ne_(+), N_(+), $${ext{N}}_{{ext{2}}}^{ + }$$ and C_(+)ions are studied. Dynamic annealing at temperatures above 500°С results in recrystallization of the diamond phase only in the case of irradiation with carbon ions, and irradiation with impurity ions causes graphitization of the ion-modified layer of diamond. According to Raman spectroscopy and reflection high-energy electron diffraction data, a nanographite structure is formed in the modified layer when irradiated with noble-gas ions. When irradiated with carbon ions, diamond grows and recrystallizes with a thin (~1 nm) graphite-like layer on the surface. In the case of nitrogen ions, a graphite layer is observed up to 720°С. Graphite-like layers on the surface of diamond are thermostable and, according to X-ray photoelectron spectroscopy, are layers of sp _(2)carbon. The Raman spectroscopy of visible light shows the different optical transparency of ion-induced structures on the surface of diamond, which correlates with the resistivities. The diamond structure disordered during ion irradiation at room temperature and the nanographite structure are more transparent than the graphite structure.