首页> 外文期刊>Journal of physical chemistry letters >Construction of Compact Methylammonium Bismuth Iodide Film Promoting Lead-Free Inverted Planar Heterojunction Organohalide Solar Cells with Open-Circuit Voltage over 0.8 V
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Construction of Compact Methylammonium Bismuth Iodide Film Promoting Lead-Free Inverted Planar Heterojunction Organohalide Solar Cells with Open-Circuit Voltage over 0.8 V

机译:Compact甲基铵铋碘化物膜促进无铅倒置平面异质结的有机卤代物太阳能电池,开路电压超过0.8V

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摘要

A bismuth-based organohalide material, methylammonium bismuth iodide (MA(3)Bi(2)I(9)), has been recently explored as an efficient lead-free light absorber in photovoltaic applications. However, the poor surface morphology of the MA(3)Bi(2)I(9) film fabricated via conventional one-step spin-coating methods has limited the performance of the device. In this work, a smooth, uniform, and compact MA(3)Bi(2)I(9) thin film was realized by a novel two-step evaporation spin-coating film fabrication strategy for the first time. Taking advantage of the superior MA(3)Bi(2)I(9) thin film, the best-performing inverted planar heterojuncion photovoltaic device exhibited a power conversion efficiency of 0.39% with open-circuit voltage as high as 0.83 V, which demonstrated the lowest loss-in-potential to date in MA(3)Bi(2)I(9)-based solar cells. Moreover, the facile film fabrication strategy utilized in this work paves the way for high reproducibility of lead-free organohalide films and devices.
机译:最近已经探索了基于铋的有机卤化物材料,甲基铋碘化物(MA(3)Bi(2)I(2)I(9))作为光伏应用中的有效无铅光吸收器。 然而,通过常规一步旋涂方法制造的MA(3)Bi(2)I(9)膜的MA(3)Bi(2)I(9)膜的差具有限制了装置的性能。 在这项工作中,通过首次进行新的两步蒸发旋涂膜制造策略,实现了光滑,均匀和紧凑的MA(3)尺寸(2)尺寸薄膜。 利用上级MA(3)BI(2)I(9)薄膜,最佳性倒平面杂磁膜光伏器件表现出0.39%的功率转换效率,开路电压高达0.83 V,这证明了 基于MA(3)BI(2)I(9)的太阳能电池的最低损失迄今为止迄今为止。 此外,在该工作中使用的容纳薄膜制造策略为无铅的机组膜和装置的高再现性铺平了道路。

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    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Key Lab Photon Technol Informat Key Lab Phys Elect &

    Devices Minist Educ Sch Elect &

    Informat Engn Xian 710049 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
  • 关键词

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