Bright inverted quantum-dot light-emitting diodes by all-solution processing

摘要

An inverted red quantum dot light-emitting diode (QLED) with peak brightness of 75444 cd m(-2) was achieved by all solution-processing, thanks to the enhanced coverage of uniform hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer (HIL) film on hydrophobic hole transport layer (HTL), which was enabled by doping PEDOT:PSS with non-ionic surfactant Triton X-100.