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Achieving better impedance matching by a sulfurization method through converting Ni into NiS/Ni3S4 composites

机译:通过将Ni转化为NIS / NI3S4复合材料,通过硫化方法实现更好的阻抗匹配

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Herein, we synthesized metallic Ni through a simple chemical reduction process. Unfortunately, the Ni showed poor microwave absorption performance because of the inferior impedance matching properties. To overcome this, a sulfurization method was employed to obtain a novel microwave absorber-NiS/Ni3S4 composite. The nickel sulfide composites displayed much better microwave absorption abilities than the metallic Ni. The reflection loss (RL) values that exceeded -10 dB were observed in the frequency range 13.8-18.0 GHz (a broad microwave absorption bandwidth of 4.2 GHz) with a thickness of only 1.8 mm. Besides, the minimum RL value was as high as -43.0 dB at 9.1 GHz with the thickness of 2.4 mm. On the basis of high dielectric loss, good impedance matching properties, as well as stronger interfacial polarization effect, it can be concluded that NiS/Ni3S4 composites possess strong-absorption properties and have great potential for application as light microwave absorbers.
机译:在此,我们通过简单的化学还原过程合成金属Ni。 不幸的是,由于差阻抗匹配特性,Ni显示出微波吸收性能差。 为了克服这一点,采用硫化方法来获得新型微波吸收剂-NIS / Ni3S4复合材料。 硫化镍复合材料显示出比金属Ni更好的微波吸收能力。 在13.8-18.0GHz(4.2GHz的宽微波吸收带宽)的频率范围内观察到-10dB的反射损耗(RL)值,厚度仅为1.8mm。 此外,最小RL值高达-43.0dB,9.1 GHz,厚度为2.4毫米。 基于高介电损耗,良好的阻抗匹配性能,以及更强的界面偏振效果,可以得出结论,NIS / Ni3S4复合材料具有强吸收性能,并且具有较大的应用潜力作为光微波吸收剂。

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