Controllable Spatial Spin Splitter in an Antiparallel Double delta-Magnetic-Barrier Semiconductor Nanostructure with Spin-Orbit Couplings

摘要

We report on a theoretical study of the Goos-Hanchen (GH) effect of spin electrons in an antiparallel double delta-magnetic-barrier semiconductor nanostructure with the spin-orbit coupling (SOC), which can be experimentally realized by depositing two ferromagnetic (FM) stripes with the horizontal magnetization on the top and bottom of the semiconductor heterostructure. Two kinds of intrinsic SOCs are taken into account and with the help of the transfer matrix method and the stationary phase method GH shifts are numerically calculated for spin electrons across the above device. It is shown that a considerable spin polarization effect in GH shifts of electrons appears in such a device, even if the SOC is involved. It is also shown that both magnitude and sign of the electron-spin polarization can be manipulated by properly adjusting the SOC strength. These interesting properties may provide an alternative approach to spin inject into the semiconductor, and such a device can be used as a SOC-tunable spin spatial splitter for spintronics applications.