Study of the Optoelectronic Properties of a CuI/MoS2 van der Waals Heterojunction Prepared by Chemical Vapor Deposition

摘要

Copper iodide (CuI) is a wide-band-gap semiconductor of the I-VII group with excellent hole-transporting properties and has great potential for application in photovoltaics. We present the preparation of a CuI/MoS2 van der Waals heterojunction (VDWH) by chemical vapor deposition on Si and quartz wafers and report its optoelectronic properties. The structure, morphology, and optoelectronic properties of CuI and MoS2 films were studied using an atomic force microscope, an ultraviolet spectrophotometer, and a Hall-effect instrument. We found that the CuI and MoS2 films have smooth surface morphologies, good crystallinity, and good current-voltage (I-V) properties. Moreover, we found that the CuI/MoS2 VDWH has strong absorption in the ultraviolet and visible bands, showing that the heterojunction is suitable for use in the windows and active layers of solar cells to enhance the efficiency of the cells.