Highly Ordered GeSi Quantum Dots Fabrication on Patterned Si Substrates with Gas Source Molecular Beam Epitaxy

摘要

GeSi nanostructures were grown on patterned Si substrate by the gas source molecular beam epitaxy (GSMBE) technology in this paper. The technique of near ultraviolet laser interference lithography (NUV-LIL) and graphic inversion were adopted in the fabrication process of nano-scale patterned Si substrate before GeSi growth. Highly ordered GeSi quantum dot (QD) arrays with uniform size were successfully achieved.