Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1-xN/AlyGa1-yN/AlxGa1-xN(x y) p-electron blocking layer

摘要

This work reports A1GaN-based deep ultraviolet light-emitting diode (DUV LED) possessing a specifically AlxGa1-xN/AlyGa1-xN/AlxGa1-xN (x y) structured p-electron blocking layer (p-EBL) to achieve the high external quantum efficiency (EQE). The impact of the p-EBL with Al y Ga1-yN insertion layer at different positions and with different AlN compositions on the hole and electron injection is systematically investigated. Our results show that, for the DUV LED structure in this work, both electrons and holes can be most efficiently injected into the active region by keeping the Al-y Ga1-yN insertion layer near to the p-region. The AlN composition for the AlyGa1-yN insertion layer has also to be optimized for maximizing the carrier injection. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)