High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures

摘要

We report a simultaneous amplified emission from InAs-based self-assembled quantum dot and quantum well in a multistack dot-in-a-well superluminescent light-emitting diode (SLD) for application in broadband sources. A combination of atomic force microscopy, photoluminescence of the test structures, and optoelectronic characterization of SLD is used to obtain an emission bandwidth of similar to 292 nm covering O-S communication band (including 850-nm band) and a maximum continuous power of similar to 1.33 mW at room temperature. (C) 2018 Society of Photo Optical Instrumentation Engineers (SPIE)