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机译:用于耗尽整体活性像素传感器的新型辐射硬CMOS传感器过程的首次试验
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
SUPA School of Physics and Astronomy University of Glasgow Glasgow G12 8QQ U.K.;
SUPA School of Physics and Astronomy University of Glasgow Glasgow G12 8QQ U.K.;
Università e INFN I-40127 Bologna Italy;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
SUPA School of Physics and Astronomy University of Glasgow Glasgow G12 8QQ U.K.;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
Università e INFN I-40127 Bologna Italy;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
CERN Experimental Physics Department CH-121 Geneve 23 Switzerland;
Analogue electronic circuits; Particle tracking detectors (Solid-state detectors); Pixelated detectors and associated VLSI electronics; Solid state detectors;
机译:用于耗尽整体活性像素传感器的新型辐射硬CMOS传感器过程的首次试验
机译:用于科学应用的CMOS单片有源像素传感器(MAPS):关于辐射硬度的一些注意事项
机译:使用HV-SOI工艺对LH-LHC进行升级的耗尽型单块有源像素传感器的测试光束结果
机译:用于耗尽型单片有源像素传感器的新型CMOS工艺的辐射硬度研究
机译:使用CMOS有源像素传感器的片上空间图像处理。
机译:采用四阱技术的单片有源像素传感器(MAPS)可实现接近100%的填充因子和完整的CMOS像素
机译:用于耗尽整体活性像素传感器的新型辐射硬CMOS传感器过程的首次试验