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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Thermoelectric properties of Pb_(1-x)Cd_xSe crystals grown by vertical bridgman method
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Thermoelectric properties of Pb_(1-x)Cd_xSe crystals grown by vertical bridgman method

机译:垂直Bridgman方法生长的PB_(1-X)CD_XSE晶体的热电性能

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摘要

Single crystals of Pb_(1-x)Cd_xSe compounds with x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron-probe microanalysis (EPMA). The thermoelectric behaviors for the Pb_(1-x)Cd_xSe crystals were studied by means of thermal and carrier transport measurements in the temperature range between 50K and 400K. X-ray diffraction and SEM analysis confirmed that as-grown Pb_(1-x)Cd_xSe crystals are simgle phase. The experimental results showed that the PbTe sample is p-type semiconductor but Pb_(1-x)Cd_xSe samples with x = 0.01, 0.03, 0.05, 0.07 and 0.1 are n-type semiconductors. Temperature dependences of resistivity, Seebeck coefficient, and thermal conductivity for the various compositions of Pb_(1-x)Cd_xSe were analyzed. The dimensionless thermoelectric figure of merit ZT for these compounds was evaluated and discussed. It was found that Pb_(0.95)Cd_(0.05)Se exhibits the best thermoelectric performance. The maximum figure of merit (ZT) of Pb_(0.95)Cd_(0.05)Se is about 0.4 7 at 290 K.
机译:通过垂直的Bridgman方法生长PB_(1-X)CD_xSE化合物的单晶(1-X)CD_xSE化合物,0.01,0.03,0.05,0.07和0.01。通过X射线衍射(XRD),扫描电子显微镜(SEM)和电子探针微分析(EPMA)研究了这些晶体的结晶相和表芯片。通过在50k和400k之间的温度范围内的热量和载体传输测量来研究PB_(1-x)CD_xSE晶体的热电学行为。 X射线衍射和SEM分析证实,生长的PB_(1-X)CD_XSE晶体是模拟相。实验结果表明,PBTE样品是p型半导体,但PB_(1-x)CD_XSE样品具有X = 0.01,0.03,0.05,0.07和0.1是n型半导体。分析了电阻率,塞贝克系数和PB_(1-x)CD_xSE各种组成的温度依赖性和热导率。评价并讨论这些化合物的优选ZT的无量纲热电值。发现PB_(0.95)CD_(0.05)SE表现出最佳的热电性能。 PB_(0.95)CD_(0.05)SE的最大优点(ZT)的数量(ZT)约为0.4 7,在290 K.

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