Dislocations in Semiconductors: Core Structure and Mobility

摘要

Dislocation motion in semiconductors is controlled by the atomistic processes which happen inside the dislocation cores. Recent theoretical investigations, based on atomistic simulations, have provided an unprecedent understanding of the dislocation core properties and the respective kink mechanisms. This may lead to a direct correlation between the microscopic properties, namely core effects, with mesoscopic properties, namely dislocation velocity. Additionally, experimental techniques may provide imaging of the dislocation cores with atomic resolution, which will allow a direct comparison between the theoretical and experimental core models.