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PALS and TEM Study on Irradiation Defects of 12Cr-ODS Steels Induced by He/H Ions

机译:HE / H离子诱导的12Cr-ODS钢照射缺陷的PALS和TEM研究

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摘要

The purpose of this study is to evaluate the irradiation defects of 12Cr-ODS steels induced by He/H ions, to provide basic understanding concerning development of fusion reactor components. Firstly, single He,H ion implantation and He/H ion co-implantation of 12Cr-ODS steels were performed at room temperature; and then SIMS were used to determine the He/H ion depth; finally, the irradiation induced defects were investigated by PALS and TEM. Characterization of the implanted samples with SIMS shows that He/H ions are mainly distributed at 4-6μm depth, consistent with the SRIM simulation. The PALS results show that the positron lifetime of H ions implanted samples increases slightly with increasing incident ions fluence, while for He and He/H ion implantation it is reversed. In addition, TEM results demonstrate that after irradiation, cavities are created in all samples, and He ion irradiation produce seriously larger damage compared to H ion. The positron lifetime results can be mainly ascribed to the difference of He and H ion interaction with defects.
机译:本研究的目的是评估他/ H离子诱导的12Cr-ODS钢的照射缺陷,以提供关于融合反应器组分的发展的基本理解。首先,在室温下进行单一HE,H离子植入和HE / H离子共注入12CR-ODS钢;然后使用SIMS来确定HE / H离子深度;最后,通过PALS和TEM研究了辐照诱导的缺陷。具有SIMS的植入样品的表征表明,HE / H离子主要分布在4-6μm深度,与SRIM模拟一致。 PALS结果表明,H离子植入样品的正电子寿命随着入射离子的增加而略微增加,而他和他/ H离子植入是逆转的。此外,TEM结果表明,在照射后,在所有样品中产生腔体,与H离子相比,他离子照射产生严重的损伤。正电子寿命结果可以主要归因于与缺陷的HE和H离子相互作用的差异。

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