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Identifying Two-Dimensional Z (2) Antiferromagnetic Topological Insulators

机译:识别二维Z(2)反铁磁拓扑绝缘体

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摘要

We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate N,el antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z (2) topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.
机译:我们重新审视了二维拓扑绝缘体可以在相互关联N,EL反射磁体中出现的问题,其中交错的磁化是关于基本的平移和时间逆转的对称性,而是将其产品视为对称性。与所谓的Z(2)拓扑绝缘体相比,缺少了拓扑不变的防铁磁性拓扑阶段的详尽表征。我们使用最近提出的Centrosymmetric Systems的标准分析了一个简单的反铁磁拓扑绝缘体和图表图的简单模型[13]。然后,我们改进了两种方法,最初设计用于顺磁系统,并使反铁磁性拓扑阶段表现出来。所提出的方法远远超出了在本工作中处理的特定实例,并承认直接的概括。我们通过两个非Centosymmetric系统的示例说明了这一点,其中已知没有简单的标准来识别拓扑阶段。我们还存在于某些情况下,在反铁磁性拓扑绝缘体中明确地建造边缘状态。

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