Performance comparison of carbon nanotube, nickel silicide nanowire and copper VLSI interconnects Perspectives and challenges ahead

摘要

Purpose - The purpose of this paper is to explore and evaluate the performance comparison of carbon nanotubes (CNT) and nickel silicide (NiSi) nanowires interconnects as prospective alternatives to copper wire interconnects. Design/methodology/approach - The increasing resistivity of the copper wire with scaling and rising demands on current density drives the need for identifying new wiring solutions. This paper explores the various alternatives to copper. The metallic bundle CNTs and NiSi nanowires are promising candidates that can potentially address the challenges faced by copper. This paper analyzes various electrical models of carbon nanotube and recently introduced novel interconnect solution using NiSi nanowires. Findings - The theoretical studies proves CNTs and NiSi nanowires to be better alternatives against copper on the ground of performance parameters, such as effective current density, delay and power consumption. NiSi nanowire provides highest propagation speed for short wire length, and copper is the best for intermediate wire length, while bundle CNTs is faster for long wire length. NiSi nanowire has lowest power consumption than copper and CNTs. Originality/value - This paper investigates, assess and compares the performance of carbon nanotubes (CNT) and NiSi nanowires interconnects as prospective alternatives to copper wire interconnects in future VLSI chips.