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Design of Two-State Nano-Memory Device from Carbon Nanotube Encapsulating Fullerene Using Graphene Nanoribbon

机译:石墨烯纳米碳含有碳纳米管的两个状态纳米记忆装置的设计

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摘要

We preesent archival memory that stores bits of data according to the different positions of a fullerence shuttle within a carbon nanotube on a graphene nanoribbon substrate. Simulations of the molecular dynamics of the system involved an encapsulated C_(60) fullerene and a carbon nanotube on a graphene nanoribbon. The attractive vdW forces between the carbon nanotube and the graphene nanoribbon induced a slight deformation in the carbon nanotube, and this deformation created energy barriers against the motion of the C60 fullerene along the axis of the carbon nanotube. Finally, bistable potential wells were generated, and the encapsulated C_(60) fullerene could be shuttled between these bistable positions along the carbon nanotube by applying an alternating force field. The C_(60) fullerene could retain its position on the carbon nanotube without an external force field, so the proposed system can function as a nonvolatile memory device. In future work, the switching speed, the applied force field, the active region, the length of the carbon nanotube, and the width of the graphene nanoribbon should be considered to improve the efficacy of the system.
机译:我们预先记录了存档存储器,其根据碳纳序纳米管基材上的碳纳米管内的富级梭子的不同位置存储数据。系统的分子动力学模拟涉及封装的C_(60)富勒烯和石墨烯纳米中的碳纳米管。碳纳米管和石墨烯纳米之间的有吸引力的Vdw力在碳纳米管中诱导略微变形,并且这种变形在沿着碳纳米管的轴线沿C60富勒烯的运动产生能量屏障。最后,产生了双稳态电位孔,并且通过施加交变力场,可以在沿着碳纳米管沿着碳纳米管的这些双稳态位置上穿梭于封装的C_(60)。 C_(60)富勒烯可以在没有外力场的情况下保持其在碳纳米管上的位置,因此所提出的系统可以用作非易失性存储器件。在未来的工作中,应考虑切换速度,施加的力场,有源区,碳纳米管的长度和石墨烯纳米泊的宽度以提高系统的功效。

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