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首页> 外文期刊>JETP Letters >Terahertz Photoconductivity in Hg1-xCdxTe near the Transition from the Direct to Inverted Spectrum
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Terahertz Photoconductivity in Hg1-xCdxTe near the Transition from the Direct to Inverted Spectrum

机译:HG1-XCDXTE中的太赫兹光电导性靠近直接转向倒光谱的过渡

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摘要

For the Hg1-xCdxTe-based structures, it is shown that the transition from the direct to inverted spectrum is accompanied by the sign change for the signals related to the terahertz photoconductivity and to the magnetophotogalvanic effect. Within the range of chemical compositions corresponding to the inverted spectrum, the photoconductivity kinetics exhibits specific features, which can result from the surface topological states.
机译:对于基于HG1-XCDXTE的结构,示出了从直接转向频谱的转变伴随着与太赫兹光电导性和磁芯vanic效应相关的信号的符号变化。 在对应于倒光谱的化学组合物的范围内,光电电动力学表现出特定的特征,其可以由表面拓扑状态产生。

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  • 来源
    《JETP Letters》 |2017年第3期|共5页
  • 作者单位

    Moscow MV Lomonosov State Univ Fac Phys Moscow 119991 Russia;

    Moscow MV Lomonosov State Univ Fac Phys Moscow 119991 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Univ Regensburg D-93053 Regensburg Germany;

    Moscow MV Lomonosov State Univ Fac Chem Moscow 119991 Russia;

    Moscow MV Lomonosov State Univ Fac Phys Moscow 119991 Russia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学;
  • 关键词

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