Effect of Magneto-Induced Diffusion Instability in III-V Semiconductor Compounds

摘要

By now, there is much experimental evidence that relatively weak (<1 T) pulsed magnetic fields (PMFs) can uniquely act on the real structure and physical features of various diamagnetic crystals. The effects induced by a magnetic field are attributed to the removal of exclusions for intercombination transitions of electrons involved in the formation of chemical bonds in complexes of defects with paramagnetic impurity centers. The concepts of the spin nature of magnetic action, which were first developed in the theory of radical reactions in liquid media, were later successfully used to construct the theory of magneto-plastic effects in dislocation crystals with paramagnetic impurities. The question of whether the presence of such impurities is necessary for the sensitivity of diamagnetic crystals to magnetic actions is still open.