首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Improved dielectric behaviour of graphene oxide-multiwalled carbon nanotube nanocomposite
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Improved dielectric behaviour of graphene oxide-multiwalled carbon nanotube nanocomposite

机译:改进石墨烯氧化物 - 多壁碳纳米管纳米复合材料的介电行为

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摘要

AbstractWe have prepared graphene oxide (GO)-multiwalled carbon nanotube (MWCNT) composite film through vacuum filtration method. In this work, we carried out the dielectric behaviour of GO-MWCNT composite film in the frequency range of 100?Hz to 1?MHz and temperature range of 30–200?°C. The GO-MWCNT composite film showed significantly higher dielectric constant as 6021 than the GO (5031) which was even very high compared to conventional dielectric materials. The enhancement of dielectric constant is attributed to the strong interaction between sp2MWCNT fillers and sp3GO matrix as well as the formation of microcapacitors by highly conductive MWCNT segregated by GO sheets. Furthermore, we found interesting transition between semiconductor to conductor was attained at 165?°C. It is suggested that the temperature dependent transition of electrical properties of GO-MWCNT composite film is closely related with the ion mobility, removal of water molecules and reduction of GO in the composite. The effect of interfacial polarization and relaxation process were studied. The redox peak current has increased significantly for the GO-MWCNT composite electrode than the GO and MWCNT where the highly conducting MWCNT provide the necessary conduction pathways on the electrode surface. These flexible, high dielectric constant nanocomposites are potential flexible dielectric materials for use in high frequency capacitors and in electronic devices.
机译:<![CDATA [ 抽象 我们通过真空过滤方法制备了石墨烯氧化物(GO)-Multiwalled碳纳米管(MWCNT)复合膜。在这项工作中,我们在100ΩHz至1?MHz的频率范围内进行了Go-MWCNT复合膜的介质行为,温度范围为30-200Ω°C。 Go-MWCNT复合膜显示出比传统介电材料相比甚至非常高的GO(5031)显着更高的介电常数。介电常数的增强归因于SP 2> 2 MWCNT填充物和SP 3 GO矩阵以及通过GO纸张隔离的高导电MWCNT形成微电偶。此外,我们发现在165°C的半导体之间的有趣过渡。建议,Go-MWCNT复合膜的电气性能的温度依赖性转变与离子迁移率密切相关,除去水分子和复合材料的转化。研究了界面偏振和弛豫过程的影响。对于GO-MWCNT复合电极而不是GO和MWCNT,氧化还原峰值电流显着增加,其中高导电MWCNT在电极表面上提供必要的导通途径。这些柔性高介电常数纳米复合材料是用于高频电容器和电子设备的潜在柔性介电材料。

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