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EQCM study on the electrochemical redox behavior of gallium in alkaline solution

机译:EQCM研究碱溶液中镓电化学氧化还原行为

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The electrochemical redox behavior of gallium (Ga) in alkaline solution was investigated using the combination of electrochemical quartz crystal microbalance (EQCM) and cyclic voltammetry (CV). The electrodeposition morphology and elemental composition were observed using the scanning electron microscope (SEM) and energy dispersive spectrometer (EDS). The results indicate that during the reduction process, the reduction of gallium anion (GaO2- ) begins at high negative values of the potential ( -1.42 V, vs. Hg/HgO), and the reduction product (Ga2O) is transformed into Ga2O3 and Ga via the disproportionation reaction; the electrodeposition potential of Ga is -1.76 V (vs. Hg/HgO). The oxidation process of Ga can be divided into four stages with the increasing of potential: (i) the oxidation of Ga to form Ga2O, (ii) the electrodissolution of Ga to form GaO2-, (iii) the formation of passivation films (GaO(OH)) on the Ga surface, and (iv) the destruction of passivation films and the continuous dissolution of Ga.
机译:使用电化学石英晶体微稳定(EQCM)和循环伏安法(CV)的组合研究了碱溶液中镓(Ga)的电化学氧化还原行为。使用扫描电子显微镜(SEM)和能量分散光谱仪(EDS)观察电沉积形态和元素组合物。结果表明,在还原过程中,镓阴离子(GaO2-)的减少在电位的高负值(-1.42V,vs.Hg / hgO)开始,并且将还原产物(Ga2O)转化为Ga2O3和通过歧化反应Ga; Ga的电沉积电位为-1.76V(vs. hg / hgo)。 Ga的氧化过程可以分为四个阶段,随着电位的增加:(i)Ga形成Ga2o的氧化,(ii)Ga形成Gao2-,(iii)的形成钝化膜(高(oh))在Ga表面,(iv)钝化膜的破坏以及Ga的连续溶解。

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