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Ag Nanowire @ Nano-groove Fabrication for Enhanced Light Harvesting Through Silicon Chemical Etching

机译:AG纳米线@纳米槽制造,通过硅化学蚀刻增强光收割

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Chemical etching was employed to fabricate Ag nanowire @ nano-grooves on silicon to increase light harvesting. Ag nanowire @ nano-groove structures (300 nm to 1.7 mu m in size) were obtained by controlling the etching time. A significant increase in the surface roughness was achieved around the Ag nanowire @ grooves with an etching time of 10-30 min. According to finite difference time domain simulations, a significant increase in both the light intensity and light path length were observed with the Ag nanowire @ nano-groove nano-structures on the silicon substrate. Increasing the opening sizes of the grooves to similar to 255 nm and the roughness of the Ag nanowire and groove surface to similar to 30 nm further enhanced the light harvesting abilities. This work not only provides a deeper insight into metal assisted silicon etching, but also indicates a possible way to enhance the light harvesting abilities of thin film solar cells.
机译:使用化学蚀刻在硅上制造Ag纳米线@纳米槽以增加光收获。 通过控制蚀刻时间获得Ag纳米线@纳米槽结构(大小为300nm至1.7μm)。 在Ag纳米线@槽周围达到表面粗糙度的显着增加,蚀刻时间为10-30分钟。 根据有限差分时域模拟,用硅衬底上的AG纳米线@纳米槽纳米结构观察光强度和光路长度的显着增加。 将凹槽的开口尺寸增加到类似于255nm的开口尺寸和Ag纳米线和槽表面的粗糙度,以类似于30nm的进一步增强了光收集能力。 这项工作不仅提供了对金属辅助硅蚀刻的更深层次的洞察力,而且还表明了提高薄膜太阳能电池的光采收能力的可能方法。

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