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首页> 外文期刊>The journal of physics and chemistry of solids >The evolution of phase structure, dielectric, strain, and energy storage density of complex-ions (Sr1/3Nb2/3)(4+) doped 0.82Bi(0.5)Na(0.5)TiO(3)-0.18Bi(0.5)K(0.5)TiO(3) ceramics
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The evolution of phase structure, dielectric, strain, and energy storage density of complex-ions (Sr1/3Nb2/3)(4+) doped 0.82Bi(0.5)Na(0.5)TiO(3)-0.18Bi(0.5)K(0.5)TiO(3) ceramics

机译:复合离子的相结构,电介质,应变和能量储存密度的演变(SR1 / 3NB2 / 3)(4 +)掺杂0.82Bi(0.5)Na(0.5)TiO(3)-0.18Bi(0.5)K. (0.5)TiO(3)陶瓷

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摘要

Lead-free Bi-0.5(Na0.82K0.18)(0.5)Ti1-x(Sr1/3Nb2/3)(x)O-3 (abbreviated as BNKT-xSN, x = 0.02-0.045) ceramics were fabricated via the conventional ceramic process, and the (Sr1/3Nb2/3)(4+) complex-ions were used to modify the phase transition and multifarious electrical responses of BNKT-xSN ceramics. The SN complex-ions absolutely incorporate into the lattice of BNKT matrix to form perovskite structure. The grain morphologies and size are almost unaffected by SN complex-ions. The phase transition concerning ferroelectric type transforming into ergodic relaxor happens with increasing SN content, and the corresponding critical point is x = 0.035. The phase transformation process results in the improvement of energy storage density (W = 0.754 J/cm(3)) at 80 kV/cm and a high bipolar strain (S = 0.25%) with small hysteresis. The dielectric constant at T-m peaks gradually decreases with increasing SN content, and the ferroelectric-relaxor transition temperature (TF-R) is depressed to room temperature. The evolution behaviors might facilitate our cognition about the mechanism between phase structure and multiple electrical properties of BNT-based ceramics.
机译:无铅BI-0.5(NA0.82K0.18)(0.5)TI1-X(SR1 / 3NB2 / 3)(X)O-3(缩写为BNKT-XSN,X = 0.02-0.045)陶瓷通过该陶瓷制造常规陶瓷方法和(SR1 / 3NB2 / 3)(4 +)复合离子用于改变BNKT-XSN陶瓷的相转变和多种电反应。 Sn复合物绝对掺入BNKT基质的晶格中以形成钙钛矿结构。晶粒形态和大小几乎不受Sn复合离子的影响。关于铁电型转化为ergodic弛豫的相转变随着Sn含量的增加而发生,相应的临界点是x = 0.035。相变过程导致在80kV / cm处的能量储存密度(W = 0.754J / cm(3))和具有小滞后的高双极菌株(S = 0.25%)。 T-M峰处的介电常数随着SN含量的增加而逐渐减小,并且将铁电酶转变温度(TF-R)抑制至室温。进化行为可能促进我们对基于BNT的陶瓷的相结构和多电性能之间的机制的认识。

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