首页> 外文会议>IEEE International Conference on Solid Dielectrics >Effect of A-site (Ba~(2+)) and B-site (Zr~(4+)) substitution on structure, dielectric spectroscopy parameters on Na_(0.5)Bi_(0.5)TiO_3 based relaxor ferroelectric ceramic exhibiting morphotropic phase boundary
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Effect of A-site (Ba~(2+)) and B-site (Zr~(4+)) substitution on structure, dielectric spectroscopy parameters on Na_(0.5)Bi_(0.5)TiO_3 based relaxor ferroelectric ceramic exhibiting morphotropic phase boundary

机译:A-urite(Ba〜(2+))和B-位点(Zr〜(4+))取代结构的影响,Na_(0.5)Bi_(0.5)TiO_3的诱导型铁电陶瓷呈现Morphotopic相位边界的介电光谱参数

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High permittivity dielectrics ceramics are often used for commercial multilayer ceramic capacitors, actuators applications, and is highly promising materials for dynamic random access memory (DRAM) and microelectromechanical systems (MEMS) applications due to its very stable, high insulating characteristic against voltage. Many studies have been conducted to enhance the above mentioned properties and most of the improvements have been achieved by doping with a small quantity of additives with some ferroelectric perovskite lead and lead free compounds. Especially, Na_(0.5)Bi_(0.5)TiO_3 (NBT) is one of the promising materials for environmental friendly application in compare to lead based composition. Extensive studies have been made on NBT based relaxor ferroelectric ceramic with a simultaneous substitution of Ba~(2+)and Zr~(4+) at A-site and B-site having led to the establishment and acceptance of the "space charge" model on the basis of explaining their structure and dielectric properties. A Polycrystalline 0.92(Bi_(0.5)Na_(0.5))Ba_(0.08)Z_(0.04)T_(0.96)O_3 (0.08BNBZT) material has been prepared by conventional solid state reaction method. X-ray diffraction pattern reveals a tetragonal structure having lattice parameters. The diffuseness parameter γ =1.59 has been established the relaxor nature. The dielectric relaxation obeyed the Vogel-Fulcher relation. Impedance spectroscopy is a convenient tool to evaluate the contribution of electrical components such as grain (g) (bulk), grain-boundary (g_b) or polarization phenomena, which influences the device properties of a material. Conductivity studies in the materials obey the Jonscher's power Law in frequency (45Hz -5MHz), temperature (35°C-600°C) range.
机译:高介电常数介质陶瓷通常用于商业多层陶瓷电容器,致动器应用,并且由于其非常稳定,高绝缘特性而导致的动态随机存取存储器(DRAM)和微机电系统(MEMS)应用是高度有前途的材料。已经进行了许多研究以增强上述性质,并且通过用一些铁电钙钛矿铅和无铅化合物掺杂少量添加剂来实现大部分改进。特别是,Na_(0.5)Bi_(0.5)TiO_3(NBT)是与基于铅的组合的环境友好应用的有希望的材料之一。在基于NBT的松弛剂铁电陶瓷上进行了广泛的研究,同时取代了A现场的Ba〜(2+)和Zr〜(4+),并导致了建立和接受“空间充电”模型在解释其结构和介电性质的基础上。通过常规固态反应方法制备了多晶0.92(Bi_(0.5)Na_(0.5))Ba_(0.08)Z_(0.04)o_3(0.08bnbzt)材料。 X射线衍射图案揭示了具有晶格参数的四方结构。扩散参数γ= 1.59已经建立了松弛的性质。介电弛豫遵循了Vogel-Futcher关系。阻抗光谱是一种方便的工具,用于评估诸如谷物(G)(散装),晶界(G_B)或偏振现象的电气部件的贡献,这影响了材料的装置性质。材料中的电导性研究在频率(45Hz -5MHz),温度(35°C-600°C)范围内遵守Jonscher的电力法。

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