Analyzing the correction factor relevant to Kerr nonlinearity in impurity doped quantum dots for a passage from non-absorbing to absorbing media: Role of noise

摘要

kerr nonlinearity is an important nonlinear optical property exhibited by quantum dot (QD). Present study en-deavors to explore the correction factors (CFs) relevant to kerr nonlinearity for nonlinear refractive index (RI) and nonlinear absorption coefficient (AC) of GaAs QD. The CF arises owing to a shift from non-absorbing to absorbing media. The QD is doped with Gaussian impurity and special stress has been given on appreciating the role of Gaussian white noise. The CFs for RI and AC have been scrutinized following the variations of a large number of important physical parameters. These parameters include e.g. electric field, magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-xAs alloy QD), carrier density, relaxation time, position-dependent effective mass, position-dependent dielectric constant, anisotropy, hydrostatic pressure and temperature. It has been found that the CF profiles are governed by the concerned physical parameter, presence/absence of noise and the route (additive/multiplicative) through which the ingression of noise to the system can take place. The CF for RI has been found to be orders of magnitude greater than that of CF for AC. Present study helps us identify the various conditions when CF would be extremely small, or, more preferably, minimized.