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A photoluminescence, thermoluminescence and electron paramagnetic resonance study of EFG grown europium doped lithium fluoride (LiF) crystals

机译:EFG成长铕掺杂锂氟化锂(LIF)晶体的光致发光,热致发光和电子顺磁共振研究

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Europium (Eu) doped LiF crystals have been grown by the Edge-defined film fed growth (EFG) technique. The designing and installation of the furnace used for the growth of the crystals have been discussed in detail. In the present study, Eu (Eu2O3) has been doped in LiF in different concentration (0.02-0.2 wt %). X-ray diffractometry (XRD) and Energy Dispersive X-ray (EDX) spectroscopy confirms the incorporation of Eu in LIF. The influence of Eu on LiF has been investigated through photoluminescence (PL), thermoluminescence (TL) and electron paramagnetic resonance (EPR) in as-grown and annealed crystals. PL emission spectra shows the presence of both Eu3+ and Eu2+ form in the as-grown crystals which is confirmed by EPR results. Whereas, in annealed crystals, Eu is present predominantly as Eu2+ form. This suggests that growing crystals at high temperature (similar to 900 degrees C) in argon gas atmosphere through EFG technique favours the reduction of Eu3+ - Eu2+. This reduction phenomenon has been explained on the basis of charge compensation model. n. study of the LT: Eu (0.02-0.2 wt %) crystals has been done after irradiation with Co-60 gamma rays. In this study, it has been observed that the TL intensity as well as glow curve structure of LiF: Eu crystals are a strong function of Eu concentration. The maximum TL is observed at Eu concentration of 0.05 wt% at which a well defined glow curve structure with a prominent peak at 185 degrees C and a small peak at 253 degrees C. Beyond this concentration (0.05 wt %), n. intensity decreases due to aggregation of defects in the host. The peak at 185 degrees C in LiF: Eu (0.05 wt %) is certainly due to the presence of Eu2+ associated defects which is also supported by the PL spectra. It has been observed that Eu doping have a key role in creation of more defect levels which lead to the increased number of electron and hole traps. Further, trapping parameters are analysed using glow curve deconvolution method to have an
机译:铕(EU)掺杂的生长晶体已经通过边缘定义的薄膜喂养生长(EFG)技术生长。已经详细讨论了用于晶体生长的炉子的设计和安装。在本研究中,EU(EU2O3)已被掺杂在不同浓度(0.02-0.2重量%)中。 X射线衍射测定法(XRD)和能量分散X射线(EDX)光谱证实欧盟在LIF中的掺入。通过以生长和退火的晶体中的光致发光(PL),热荧光(TL)和电子顺磁共振(EPR)研究了EU对LIF的影响。 PL发射光谱显示通过EPR结果证实的生长晶体中Eu3 +和Eu2 +形式的存在。然而,在退火的晶体中,EU主要作为EU2 +形式存在。这表明通过EFG技术在氩气气氛中在高温(类似于900摄氏度)的晶体中越来越多地利用EF3 + - &GT的减少; EU2 +。这种减少现象已经基于充电补偿模型解释。 ñ。对LT:欧盟(0.02-0.2重量%)晶体的研究已经在用CO-60γ射线照射后进行。在这项研究中,已经观察到LiF的T1强度以及荧光曲线结构:欧盟晶体是Eu浓度的强效力。以0.05wt%的Eu浓度观察到最大T1,在0.05wt%的0.05wt%,在185摄氏度下具有突出峰的良好定义的辉光曲线结构,并且在253℃下的小峰值。超出该浓度(0.05wt%),n。由于主机中的缺陷聚集,强度降低。 LiF中185摄氏度的峰值:Eu(0.05wt%)肯定是由于欧盟2 +相关缺陷的存在,其也由PL光谱支撑。已经观察到欧盟兴奋剂在创造更多缺陷水平方面具有关键作用,这导致了增加的电子和孔陷阱数量增加。此外,使用发光曲线折叠卷积方法分析捕获参数来具有

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