Optical and Structural Properties of Indium Sulfide Thin Film Produced by CBD Method

摘要

Indium sulfide thin films were prepared by chemical bath deposition (CBD) method on a glass substrate at a sedimentation time of about 45 min. The films were grown at different bath temperature as 30, 55, 70 and 85 degrees C. The crystallinity, nanostructures and morphology of the prepared films have been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses. Optical reflectance of layers was measured in the energy range of 1.5-5.5 eV by spectrophotometer instrument. Kramers-Kronig relations were used to calculate the optical constants. The X-ray diffraction spectrum showed that by increasing in growth temperature, crystalline structure was changed. According to the atomic force microscope images, with increasing growth temperature, roughness increases consistently. Optical results revealed that the highest optical band gap of 3.4 eV and the highest transmittance of 90% were achieved at higher deposition temperature (85 degrees C).