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Metal-Insulator Phase Transition in Iron-Doped Vanadium Dioxide Thin Films

机译:铁掺杂钒二氧化薄膜中的金属绝缘体相变

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摘要

The electrical conductivity of polycrystalline V(1-x)FexO2 films has been investigated in a wide temperature range, which covers both the metal and insulator phase regions. It is shown that with an increase in the iron concentration the metal-insulator phase transition shifts toward lower temperatures, while the temperature range of the transition in doped samples additionally broadens as compared with pure VO2. To explain the temperature dependence of the electrical conductivity of the V(1-x)FexO2 insulator phase, a hopping conductivity model has been used, which takes into account the effect of thermal vibrations of atoms on the resonance integral. The values of parameter epsilon have been calculated as a function of the degree of VO2 doping.
机译:在宽温度范围内研究了多晶V(1-x)FexO 2膜的电导率,其覆盖金属和绝缘子相位区域。 结果表明,由于铁浓度的增加,金属 - 绝缘体相转变朝向较低温度偏移,而掺杂样品中的过渡的温度范围与纯VO2相比较宽。 为了解释V(1-x)Fexo2绝缘体阶段的导电性的温度依赖性,已经使用了跳跃电导率模型,这考虑了原子热振动对共振积分的影响。 参数epsilon的值已经计算为Vo2掺杂程度的函数。

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