A novel magnetic field enhancement device designed by multi-layered nanofilm structures filled with dopant

摘要

It is difficult to design an excellent field enhancement device in optical band. For the above problem, a novel magnetic field enhancement device is proposed in this paper. Firstly, the field in the ENZ media doped with dielectrics has been analyzed theoretically. From the practical point of view, it is proposed that the structure of ENZ media filled with dielectrics should be equivalent to EMNZ media when it is used to enhance the external incident field for the first time. Then, the magnetic field enhancement device is designed by the multi-layered Ag/SiC nanofilm structures filled with dopant at the wavelength of 430 nm based on the doping method. The theoretical analysis shows that the above structure has notable field enhancement properties to incident field when it is equivalent to an EMNZ media, which has been verified by full-wave simulation experiments. This work provides a novel way for the development of new optical ignition devices.