Sources of 1/f noise in QDOGFET single-photon detectors

摘要

We investigate the sources of 1/f noise in a quantum dot, optically gated, field-effect transistor (QDOGFET) that uses a two-dimensional electron gas (2DEG) system to read out singly-charged quantum dots. We use a linear-systems model based on an empirical law developed by Hooge [1] to show how the individual contributions of 1/f noise produced in the gated and ungated portions of the dual-2DEG system impact the signal-to-noise ratio (SNR) of the readout and vary with temperature and bias conditions. Our analysis reveals that the gate voltage can be used as a sensitive knob for controlling the contributions made by the various noise sources. We demonstrate how the SNR varies with the temperature and bias voltages of the QDOGFET and explain the behavior in terms of the transconductances and the various noise contributions of the conduction paths.