Tunable electronic structures of C2N/germanane van der waals heterostructures using an external electric field and normal strain

摘要

Because the van der Waals (vdW) heterostructure offers unusual physical properties that can pave new ways toward design of nanoelectronic and optoelectronic devices, we have studied the electronic structures of C2N/germanane vdW heterostructures under vertical electric field and strain using density functional theory (DFT). It is found that metal-semiconductor phase transitions occurred at -0.4 and 0.8 V/angstrom and band alignment transitions from type-II to type-I appeared at 0.1 and 0.4 V/angstrom. Furthermore, we also found that band alignment transition from type-II to type-I emerged under in-plane biaxial strain of 3%. Our results indicated that C2N/ germanane vdW heterostructures may offer a wide range of applications in new nanoelectronic and optoelectronic devices.