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MgB2 wire diameter reduction by hot isostatic pressing-a route for enhanced critical current density

机译:MGB2线直径通过热等静压挤压 - 一种增强临界电流密度的途径

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The effect of wire diameter reduction on the critical current density of pristine MgB2 wire was studied. Wires were treated by a hot isostatic pressing method at 570 degrees C and at pressures of up to 1.1 GPa. It was found that the wire diameter reduction induces an increase of up to 70% in the mass density of the superconducting cores. This feature leads to increases in critical current, critical current density, and pinning force density. The magnitude and field dependence of the critical current density are related to both grain connectivity and structural defects, which act as effective pinning centers. High field transport properties were obtained without doping of the MgB2 phase. A critical current density j(c) of 3500 A mm(-2) was reached at 4 K, 6 T for the best sample, which was a five-fold increase compared to MgB2 samples synthesized at ambient pressure.
机译:研究了线径降低对原始MGB2线临界电流密度的影响。 在570℃下通过热等静压方法和高达1.1GPa的压力进行电线。 发现线径降低在超导芯的质量密度中引起高达70%的增加。 该特征导致临界电流,临界电流密度和钉扎力密度的增加。 临界电流密度的幅度和场依赖性与晶粒连通性和结构缺陷的依赖性有关,其充当有效的钉扎中心。 获得高场迁移性能而无需掺杂MGB2相。 与在环境压力下合成的MGB2样品相比,在4 k,6℃下达到3500amm(-2)的临界电流密度j(c),以达到4 k,6℃,这与MgB 2样品相比为5倍。

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