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首页> 外文期刊>Superconductor Science & Technology >Inductance analysis of superconducting quantum interference devices with 3D nano-bridge junctions
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Inductance analysis of superconducting quantum interference devices with 3D nano-bridge junctions

机译:三维纳米桥接连接的超导量子干扰装置的电感分析

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摘要

Superconducting quantum interference devices (SQUIDs) with 3D nano-bridge junctions can be miniaturized into nano-SQUIDs that are able to sense a few spins in a large magnetic field. Among all device parameters, the inductance is key to the performance of SQUIDs with 3D nano-bridge junctions. Here, we measured the critical-current magnetic flux modulation curves of 12 devices with three design types using a current strip-line directly coupled to the SQUID loop. A best flux modulation depth of 71% was achieved for our 3D Nb SQUID. From the modulation curves, we extracted the inductance values of the current stripe-line in each design and compared them with the corresponding simulation results of InductEX. In this way, London penetration depths of 110 and 420 nm were determined for our Nb (niobium) and NbN (niobium nitride) films, respectively. Furthermore, we showed that inductances of 11 and 119 pH for Nb and NbN 3D nano-bridge junctions, respectively, dominated the total inductance of our SQUID loops which are 23 pH for Nb and 255 pH for NbN. A screening parameter being equal to one suggests optimal critical currents of 89.6 and 8.1 mu A for Nb and NbN SQUIDs, respectively. Additionally, intrinsic flux noise of 110 +/- 40 n Phi(0)/(Hz)(1/2) is calculated for the Nb SQUIDs with 3D nano-bridge junctions by Langevin simulation.
机译:具有3D纳米桥接连接的超导量子干涉装置(鱿鱼)可以小型化成能够在大磁场中感测几个旋转的纳米鱿鱼。在所有设备参数中,电感是具有3D纳米桥接连接的鱿鱼性能的关键。这里,我们使用直接耦合到鱿鱼圈的电流带线测量了具有三种设计类型的12个器件的临界电流磁通量调制曲线。对于我们的3D NB鱿鱼,实现了最佳磁通调制深度为71%。从调制曲线来看,我们在每个设计中提取了当前条带线的电感值,并将它们与电感的相应仿真结果进行了比较。以这种方式,针对我们的Nb(铌)和NbN(氮化铌)膜分别测定110和420nm的伦敦渗透深度。此外,我们表明,对于Nb和Nbn 3D纳米桥接连接的11和119 pH的电感分别主导了我们的鱿鱼环的总电感,这对于Nb的Nb和255 pH为23 pH。等于一个筛选参数表明,对于NB和NBN鱿鱼,分别表明了89.6和8.1μA的最佳临界电流。另外,通过Langevin模拟计算带有3D纳米桥接连接的Nb鱿鱼的110 +/- 40 n phi(0)/(hz)(1/2)的内在通量噪声。

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  • 作者单位

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

    Chinese Acad Sci CAS Ctr Excellence Supercond Elect CENSE State Key Lab Funct Mat Informat Shanghai Inst Microsyst &

    Informat Technol SIMIT Shanghai 200050 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 超导电性 ; 导电材料及其制品 ;
  • 关键词

    inductance; nano-SQUID; 3D nano-bridge junction; London penetration depth; screening parameter;

    机译:电感;纳米鱿鱼;3D纳米桥接界;伦敦渗透深度;筛选参数;

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