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3N4 and Si2N2O in silicon powder nitridation]]>

机译:<!“PLACE =”POST“> 2 N 2 O在硅胶粉氮]]]>

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摘要

Abstract Commercial silicon powders are nitrided at constant temperatures (1453?K; 1513?K; 1633?K; 1693?K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O. Graphical abstract Display Omitted Highlights ? Si3N4 and Si2N2O are formed through the nitridation of silicon powders. ? Two morphologies of fibroid and short columnar Si3N4 are detected in the samples. ? The formation mechanisms of Si3
机译:<![CDATA [ 抽象 商用硅粉末在恒定温度下氮化(1453?K; 1513?K; 1693? k)。 X射线衍射结果表明,少量SI 3 N 4 和SI < CE:INF LOC =“POST”> 2 N 2 O形成为样品中的氮化产品。肌瘤和短柱SI 3 N 4 在样品中检测到。 SI 3 N 4 和SI 2 N 2 O被分析。在硅粉氮的初始阶段,样品外部的Si捕获少量O 2 在N 2 气氛,形成SIO 2的薄膜,在表面上密封残留硅的表面。和SiO 2 薄膜和游离硅在逐渐降低,因此产生了被动氧化转化为活性氧化和亚稳态SiO(g)。当SiO(g)部分压力足够高,SIO 2 胶片将破解,N 2 通过裂缝渗透到样品的中心部分,生成SI 2 N 2 O和SHORT CLANEAR SI 3 N 4 原位。同时,亚稳态SiO(g)与n 2 和形式fibroid si 3 n 4 。在氧气部分压力高的区域中,Si 3 N 4 被氧化成si 2 n 2 o。 图形抽象 显示省略 突出显示 si 3 n 4 和SI 2 N 2 O通过硅粉的硝化。 肌瘤和短柱的两种形态Si 3 N 4 在样本中检测到。 SI 3

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