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2CrO 4 and AgI semiconductors with g-C 3N 4: Novel nanocomposites with substantially improved photocatalytic performance under visible light]]>

机译:<![CDATA [AG 2 CRO 4 和AGI半导体,带GC 3 N 4 :在可见光下具有显着改善的光催化性能的新型纳米复合材料]]>

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摘要

Novel g-C3N4/Ag2CrO4/AgI nanocomposites with improved photocatalytic performance under visible light were synthesized by consecutive deposition of Ag2CrO4and AgI semiconductors over g-C3N4sheets by refluxing method. The synthesized g-C3N4/Ag2CrO4/AgI photocatalysts were fully characterized by XRD, EDX, SEM, TEM, UV–vis DRS, TGA, FT-IR, and PL instruments. Photocatalytic performance of g-C3N4/Ag2CrO4/AgI (30%) nanocomposite for degradation of RhB was 27.9, 4.0, and 3.1 folds greater than those of the g-C3N4, g-C3N4/Ag2CrO4(20%), and g-C3N4/AgI (30%) photocatalysts, respectively. The substantially increased photocatalytic performance was related to efficient retardation of the charge carriers from recombination and more absorbing of visible light, due to the synergistic effects of Ag2CrO4and AgI on g-C3N4. The photocatalytic performance of the ternary nanocomposite did not considerably change after several cycles, indicating that the ternary nanocomposite is stable and it could be reused in successive runs.
机译:通过回流方法通过在G-C3N4表上连续沉积Ag2CrO4和Agi半导体,合成具有改善的光催化性能的新型G-C3N4 / Ag2Cro4 / Agi纳米复合材料。合成的G-C3N4 / AG2CRO4 / AGI光催化剂通过XRD,EDX,SEM,TEM,UV-Vis DRS,TGA,FT-IR和PL仪器进行了完全表征。用于降解RHB的G-C3N4 / Ag2Cro4 / AgI(30%)纳米复合材料的光催化性能为27.9,4.0和3.1倍,大于G-C3N4,G-C3N4 / Ag2Cro4(20%)和G-C3N4 / AGI(30%)光催化剂分别。由于Ag2Cro 4和Agi对G-C3N4上的协同作用,显着增加的光催化性能与电荷载流子的有效延迟有关。在几个循环后,三元纳米复合材料的光催化性能没有显着变化,表明三元纳米复合材料是稳定的,并且可以在连续运行中重复使用。

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