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机译:杂交阳极和金属辅助化学蚀刻方法,从而能够制造碳化硅纳米线
State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment Guangdong University of Technology Guangzhou 510006 China;
School of Materials Science and Engineering Georgia Institute of Technology 711 Ferst Drive Atlanta GA 30332 USA;
School of Materials Science and Engineering Georgia Institute of Technology 711 Ferst Drive Atlanta GA 30332 USA;
School of Engineering The Chinese University of Hong Kong Shatin Hong Kong;
State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment Guangdong University of Technology Guangzhou 510006 China;
State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment Guangdong University of Technology Guangzhou 510006 China;
School of Engineering The Chinese University of Hong Kong Shatin Hong Kong;
School of Materials Science and Engineering Georgia Institute of Technology 711 Ferst Drive Atlanta GA 30332 USA;
hybrid anodic and metal-assisted chemical etching method; silicon carbide (SiC) nanowires; silicon carbide (SiC) wet etching; thirdgeneration semiconductor material;
机译:杂交阳极和金属辅助化学蚀刻方法,从而能够制造碳化硅纳米线
机译:金属辅助化学蚀刻综合研究Au Nano-inah作为硅纳米线阵列制造中的催化剂
机译:通过银金属辅助化学蚀刻制备的N型硅纳米线:制造和光学性质
机译:使用金属辅助化学刻蚀为太阳能电池应用制造大规模协同硅纳米线阵列
机译:结晶碳化硅的反应离子刻蚀和碳化硅器件的制造。
机译:金属辅助化学蚀刻的无光刻技术制造硅纳米线和纳米孔阵列
机译:金属辅助化学蚀刻综合研究Au Nano-inah作为硅纳米线阵列制造中的催化剂