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Comprehensive Study of Au Nano-Mesh as a Catalyst in the Fabrication of Silicon Nanowires Arrays by Metal-Assisted Chemical Etching

机译:金属辅助化学蚀刻综合研究Au Nano-inah作为硅纳米线阵列制造中的催化剂

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Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle.
机译:硅纳米线(SINWS)阵列已成为用于制备高性能光电器件的低维结构纳米材料之一,具有高效的光捕获效果,载流子倍增和可调节光学带隙的优点。 SINW的受控生长决定了它们的电气和光学性质。通过涉及Ag基蚀刻工艺的常规金属辅助化学蚀刻(坐标)制造的硅纳米线的形态不能精确地控制。超薄阳极氧化铝(AAO)是用于合成纳米材料的新型纳米结构组装系统之一。通过调节AAO膜参数,可以调谐合成的纳米结构阵列以在某种波长范围内表现出不同的光学和电性能。在本文中,我们从单个六方AaO膜作为复制母料而不是常规Ag颗粒作为蚀刻催化剂来证明超薄的Au纳米网阵列。通过纳米级贵金属网格的选择性化学溶解来制造延伸的硅纳米线阵列,其在宽带波长和宽入射角处具有出色的抗反射性能。

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