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Layer-by-Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate

机译:在金属基材上外延生长的扭曲石墨烯片的层逐层去耦

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摘要

The electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/ Ir(111), is investigated. Using scanning tunneling microscopy and Landaulevel spectroscopy, it is shown that for a monolayer and bilayers with smallangle rotations, Landau levels are fully suppressed, indicating that the metal–graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free-standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.
机译:在与下面的基板相互作用时,石墨烯的电子性质可以有效地改变导致电荷载流子行为的显着变化。这里,研究了通过在石墨烯/ IR(111)中的原子碳的层内嵌入原子碳,对金属上外延石墨烯的局部电子特性的演变。使用扫描隧穿显微镜和LANEALUALEVEL光谱,表明对于单层和双层旋转,LANDAU水平完全抑制,表明金属 - 石墨烯相互作用主要限于第一石墨烯层。具有大的扭曲角度以及扭曲三层的双层展示了一系列明显的石墨烯单层的特征,用于从金属基板有效地去耦的自由静态石墨烯单层。这些发现提供了具有不同程度的去耦的外延石墨烯多层的控制准备,这代表了未来电子和旋转式应用的理想平台。

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  • 来源
    《Small》 |2018年第13期|共9页
  • 作者单位

    Department of Physics University of Konstanz 78457 Konstanz Germany;

    Physics Department Shanghai University Shanghai 200444 China;

    Department of Physics University of Konstanz 78457 Konstanz Germany;

    Department of Physics University of Konstanz 78457 Konstanz Germany;

    Department of Physics University of Konstanz 78457 Konstanz Germany;

    II. Physikalisches Institut Universit?t zu K?ln Zülpicher Stra?e 77 50937 K?ln Germany;

    II. Physikalisches Institut Universit?t zu K?ln Zülpicher Stra?e 77 50937 K?ln Germany;

    Institut für Physik Technische Universit?t Ilmenau 98693 Ilmenau Germany;

    Institut für Physik Technische Universit?t Ilmenau 98693 Ilmenau Germany;

    Physics Department Shanghai University Shanghai 200444 China;

    Department of Physics University of Konstanz 78457 Konstanz Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    graphene; Landau levels; scanning tunneling microscopy;

    机译:石墨烯;Landau水平;扫描隧道显微镜;

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