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Modelling and experimental validation of the effect of the elastic properties of fabrics on the durability of screen printed e-textiles

机译:织物弹性特性对丝网印刷电子纺织品耐久性影响的建模与实验验证

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摘要

Fabrics are stiff in tension but highly compliant in compression in the plane of the textile. The effect of these differing elastic properties on the durability of electronics integrated in or on the fabric is still largely unknown because fabric properties are not easily characterised. Using a mathematical model combining classical beam theory (CBT) and Pierce's fabric cantilever test, this paper models the bending behaviour of a woven fabric and locates its neutral axis ( NA) as a basis for developing more durable printed e-textiles. The CBT model showed that the difference in the tensile and compressive moduli of a fabric reduces the bending resistance of the fabric and also moves its NA position away from the central axis on the fabric. Results obtained from a Pierce's bending test of four different textile blends of polyester, cotton and lycra indicate textiles can have anisotropic elastic moduli with different values in their warp and weft directions. This results in different NA positions that vary depending upon the direction of the bending forces. Empirical verification of these NAs was achieved by comparing the change in resistance of a set of screen printed piezoresistive strain gauges positioned on and away from the NA during positive and negative bending with a radius of 5 mm. The gauge positioned at a 1% distance from the NA position showed approximately 0.3% change in its electrical resistance in contrast to a 37% change in its resistance when it was located at a 65% distance away from the NA.
机译:织物在张力中的张力僵硬,但在纺织平面中的压缩方面非常符合。这些不同的弹性性能对集成在织物中或织物上的电子器件耐久性的影响仍然很大程度上是未知的,因为不容易表征织物性能。使用数学模型组合经典光束理论(CBT)和Pierce的织物悬臂测试,本文模拟了织物的弯曲行为,并将其中性轴(NA)定位为开发更耐用的印刷电子纺织品的基础。 CBT模型表明,织物的拉伸和压缩模态的差异降低了织物的弯曲电阻,并且还将其Na位置远离织物上的中心轴线移动。从Pierce的聚酯,棉花和莱卡的四种不同纺织混合物的Pierce弯曲试验中获得的结果表明纺织品可以具有各向异性的弹性模,在其经线和纬向方向上具有不同的值。这导致不同的NA位置,其根据弯曲力的方向而变化。通过比较一组丝网印刷压阻式应变计的电阻的变化来实现这些NAS的经验验证,其在阳性和负弯曲期间的半径为5mm。距离Na位置的1%距离位于1%距离的规格显示其电阻的变化约为0.3%,相反,当它位于远离Na的65%距离处的距离为65%时,其电阻的变化率约为37%。

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