ZnMgO-nanorod-based Schottky Light-emitting Diode Fabricated on n-SiC Substrate Using Low-temperature Method

摘要

We fabricated a ZnMgOnanorodbased Schottky lightemitting diode (LED) on an n-SiC substrate using a lowtemperature growth method. Study about structural properties of ZnMgO nanorods was carried out by field emission scanning electron microscopy (FE-SEM) and fourier-transforms infrared spectroscopy (FTIR). The electrooptical properties of the ZnMgO nanorods were investigated using photoluminescence (PL), electroluminescence (EL) and current-voltage measurements. The values of ideality factor, barrier height and series resistance were calculated 3.22 1.1eV and 187 omega, respectively. The understanding of the optical properties and luminescence performance of the ZnMgO-nanorod based Schottky LED is important for applications in optical nanodevices. The PL measurements of the ZnMgO nanorods revealed a blueshift of the ultraviolet (UV) emission peak, which suggests their potentials for the development of tunable optical nanodevices. The blueshift of the UV emission was attributed to the diffusion of Mg and formation of the ternary ZnMgO alloy. The EL spectra exhibited an emission band covering the visible range from 40 nm to 700 nm. Gaussian functions were employed to simulate the experimental data, which revealed that the emission band can be regarded as a superposition of violet, blue, green and yellow emissions.