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首页> 外文期刊>SIAM journal on applied dynamical systems >Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction
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Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction

机译:用于改善氢进化反应的工程单层MOS2缺陷

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摘要

MoS2 is a promising and low-cost material for electrochemical hydrogen production due to its high activity and stability during the reaction. However, the efficiency of hydrogen production is limited by the amount of active sites, for example, edges, in MoS2. Here, we demonstrate that oxygen plasma exposure and hydrogen treatment on pristine monolayer MoS2 could introduce more active sites via the formation of defects within the monolayer, leading to a high density of exposed edges and a significant improvement of the hydrogen evolution activity. These as-fabricated defects are characterized at the scale from macroscopic continuum to discrete atoms. Our work represents a facile method to increase the hydrogen production in electrochemical reaction of MoS2 via defect engineering, and helps to understand the catalytic properties of MoS2.
机译:MOS2是电化学氢生产的有希望和低成本的材料,其由于其在反应过程中的高活性和稳定性。 然而,氢气产生的效率受到MOS2中的活性部位的量的限制,例如边缘。 这里,我们证明了原始单层MOS2上的氧等离子体暴露和氢处理可以通过单层内的缺陷引入更多的活性位点,导致高密度的暴露边缘和氢进化活性的显着改善。 这些以制造的缺陷的特征在于从宏观连续核与离散原子的规模。 我们的作品代表了通过缺陷工程增加MOS2电化学反应中的氢气产生的容易方法,并有助于了解MOS2的催化性质。

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