Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual-gate a-IGZO Thin Film Transistors

摘要

The effects of mechanical stress and gate bias stress on dual-gate a-IGZO thin-film transistors on a flexible substrate were investigated. Both tensile and compressive stresses increased free electrons and deep states in a-IGZO, More deep defects will be formed under strong tensile stress, while small compressive stress can repair defects in the relatively poor quality etch-stop layer. Moisture still influence the stability even for the TFTs with etch stop layer and passivation layer under gate bias stress test.